solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / sdr95 _ _ _ _ _ _ _ _ screening 2 / __ = not screened tx = tx level txv = txv level s = s level lead bend option (see figure 1) package m = to-254, z = to-254z voltage 3 = 300v, 4 = 400v, 5 = 500v, 6 = 600v. sdr953m & z thru sdr956m & z 50a, 35nsec, 300-600 v hyper fast rectifier features : ? hyper fast recovery: 35nsec maximum 3 / ? high surge rating ? low reverse leakage current ? low junction capacitance ? hermetically sealed low profile package ? gold eutectic die attach available ? ultrasonic aluminum wire bonds ? higher voltages and faster recovery times available, contact factory ? ceramic seal for improved hermeticity available ? tx, txv, and s-level screening available 2 / maximum ratings symbol value units peak repetitive reverse voltage and dc blocking voltage sdr953m & z sdr954m & z sdr955m & z sdr956m & z v rrm v rwm v r 300 400 500 600 volts average rectified forward current (resistive load, 60 hz sine wave, t a = 25 c) io 50 amps peak surge current 5 / (8.3 ms pulse, half sine wave, or equivalent dc) 4 / i fsm 450 amps operating & storage temperature t op & t stg -65 to +200 oc maximum total thermal resistance junction to case r jc 1.2 oc/w notes: 1/ for ordering information, price, operating curves, and availability- contact factory. 2/ screening based on mil-prf-19500. screening flows available on request. 3/ recovery conditions: i f =.5 amp, i r = 1a, i rr = .25a. 4/ pins 2 and 3 tied together. 5/ available with higher surge ratings. to-254 (m) to-254z (z) note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: rh0029g doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sdr953m & z thru sdr956m & z electrical characteristics symbol max units instantaneous forward voltage drop 4 / (i f = 25a, pulse) (i f = 50a, pulse) t a = 25 oc t a = 25 oc v f1 v f2 1.30 1.65 v dc instantaneous forward voltage drop 4 / (i f = 25adc, pulse) t a = -55 oc t a = 100 oc v f3 v f4 1.4 1.2 v dc reverse leakage current t a = 25 oc, rated v r , pulse t a = 100 oc, 80% rated v r, pulse i r1 i r2 200 10 a m reverse recovery time ( i f =.5 amp, i r = 1a, i rr = .25a) t a = 25 oc t rr 35 nsec junction capacitance (v r = 10v dc , t a = 25oc, f = 1mhz) c j 250 pf figure 1- optional lead bends pin assignment (to-254 and to-254z packages) code function pin 1 pin 2 pin 3 cathode anode anode suffix db suffix ub to-254 (suffix m) outline: to-254z (suffix z) outline: note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: rh0029g doc .190 .150 .190 .150 .170 min .170 min
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